Kuvandudzwa kwekuita kwepamusoro, inotakurika uye miniaturized gasi sensors iri kuwedzera kutariswa muminda yekutarisa kwezvakatipoteredza, chengetedzo, kuongororwa kwekurapa uye zvekurima.Pakati pezvishandiso zvakasiyana-siyana zvekuona, metal-oxide-semiconductor (MOS) chemo-resistive gas sensors ndiyo inonyanya kufarirwa sarudzo yezvikumbiro zvekutengesa nekuda kwekugadzikana kwazvo, mutengo wakaderera, uye kunzwa kwakanyanya.Imwe yenzira dzinonyanya kukosha yekuwedzera kuvandudza kushanda kwe sensor ndeye kusikwa kwe nanosized MOS-based heterojunctions (hetero-nanostructured MOS) kubva kuMOS nanomaterials.Nekudaro, iyo yekunzwa mashandiro eiyo heteronanostructured MOS sensor yakasiyana neyeimwe MOS gasi sensor, sezvo yakaoma kwazvo.Kuita kwesensor kunokanganiswa neakasiyana ma parameter, anosanganisira emuviri uye kemikari zvimiro zvezvinhu zvinonzwisa tsitsi (senge saizi yezviyo, defect density, uye zvinhu zvinzvimbo zveokisijeni), tembiricha yekushandisa, uye chimiro chemudziyo.Ongororo iyi inopa akati wandei mazano ekugadzira yakakwira mashandiro egasi masensa nekuongorora nzira yekunzwa yeheterogeneous nanostructured MOS sensors.Mukuwedzera, pesvedzero yechimiro chejometri yemudziyo, inotarwa nehukama pakati pezvinhu zvinonzwisisika uye electrode inoshanda, inokurukurwa.Kudzidza maitiro e sensor zvakarongeka, chinyorwa ichi chinosuma uye chinokurukura maitiro akajairwa ekuona matatu akajairwa geometric zvimiro zvemidziyo yakavakirwa pane akasiyana heteronanostructured zvinhu.Ongororo iyi ichashanda segwara kune vaverengi venguva yemberi vanodzidza nzira dzakasimba dzegasi sensors uye kugadzira yakakwirira kuita gasi sensors.
Kusvibiswa kwemhepo idambudziko riri kuramba richikura uye idambudziko rakakura remhoteredzo yepasi rose rinotyisidzira kugara zvakanaka kwevanhu uye zvipenyu.Kufema kwezvinosvibisa gasi kunogona kukonzera matambudziko mazhinji ehutano akadai sechirwere chekufema, kenza yemapapu, leukemia uye kunyange kufa nguva isati yakwana1,2,3,4.Kubva 2012 kusvika 2016, mamirioni avanhu anonzi akafa nekusvibiswa kwemhepo, uye gore rega rega, mabhiriyoni evanhu akaratidzirwa kuhurombo hwemhepo5.Naizvozvo, zvakakosha kukudziridza inotakurika uye miniaturized gasi sensors inogona kupa chaiyo-nguva mhinduro uye yakakwirira yekuona kuita (semuenzaniso, senitivity, selectivity, kugadzikana, uye kupindura uye kupora nguva).Pamusoro pekutarisa kwezvakatipoteredza, magasi sensors anoita basa rakakosha mukuchengetedza6,7,8, medical diagnostics9,10, aquaculture11 uye mamwe minda12.
Parizvino, akati wandei anotakurika gasi sensors akavakirwa pane akasiyana ekuona masisitimu akaunzwa, senge optical13,14,15,16,17,18, electrochemical19,20,21,22 uye makemikari resistive sensors23,24.Pakati pazvo, metal-oxide-semiconductor (MOS) chemical resistive sensors ndiyo inonyanya kufarirwa mumashandisirwo ekutengeserana nekuda kwekugadzikana kwayo uye mutengo wakaderera25,26.Iyo yakasvibiswa yakagadziriswa inogona kutariswa nekungoona shanduko mukuramba kweMOS.Mukutanga kwema1960, yekutanga chemo-resistive gasi sensors yakavakirwa paZnO matete mafirimu akashumwa, zvichiunza kufarira kukuru mumunda wekuonekwa kwegasi27,28.Nhasi, maMOS akawanda akasiyana anoshandiswa sezvinhu zvinobata gasi, uye anogona kupatsanurwa mumapoka maviri zvichienderana nehunhu hwawo: n-mhando MOS ine maerekitironi seyakawanda inotakura machaji uye p-mhando MOS ine maburi sevazhinji vanochaja vatakuri.kuchaja vatakuri.Kazhinji, p-type MOS haina kunyanya kufarirwa kupfuura n-type MOS nokuti inductive response yep-type MOS (Sp) inoenzanirana neskweya mudzi we n-type MOS (\(S_p = \sqrt { S_n}\ ) ) pamafungiro akafanana (somuenzaniso, chimiro chechimiro chechimiro uye shanduko imwechete mukukotama kwemabhandi mumhepo) 29,30.Nekudaro, ma-single-base MOS sensors achiri kutarisana nematambudziko senge kusakwana kwekuona muganho, kuderera kwekunzwa uye kusarudza mukushandisa zvinoshanda.Nyaya dzekusarudza dzinogona kugadziriswa kusvika pamwero wakati nekugadzira mitsara yema sensors (anonzi "magetsi mhino") uye nekubatanidza computational yekuongorora algorithms senge kudzidzisa vector quantization (LVQ), principal component analysis (PCA), uye partial small squares (PLS) analysis31 , 32. semuenzaniso MOS40,41,42 , noble metal nanoparticles (NPs))43,44, carbon nanomaterials45,46 and conductive polymers47,48) kugadzira nanoscale heterojunctions (kureva, heteronanostructured MOS) dzimwe nzira dzinodiwa kugadzirisa matambudziko ari pamusoro.Kuenzaniswa nemafirimu akakora eMOS echinyakare, yakaderera-dimensional MOS ine yakakwirira chaiyo nzvimbo inogona kupa nzvimbo dzinoshanda dzekushambadza gasi uye kufambisa gasi kupararira36,37,49.Mukuwedzera, dhizaini yeMOS-based heteronanostructures inogona kuwedzera tune kutakura kutakura kune heterointerface, zvichiita kuti kuchinja kukuru mukupikisa nekuda kwekushanda kwakasiyana-siyana50,51,52.Mukuwedzera, mamwe maitiro emakemikari (semuenzaniso, catalytic activity uye synergistic surface reactions) inoitika mukugadzirwa kweMOS heteronanostructures inogonawo kuvandudza sensor performance.50,53,54 Kunyange zvazvo kugadzira nekugadzira MOS heteronanostructures ichava nzira inovimbisa yekuvandudza. sensor performance, yemazuva ano chemo-resistive sensors inowanzo shandisa kuedza uye kukanganisa, izvo zvinotora nguva uye zvisingashande.Naizvozvo, zvakakosha kuti unzwisise nzira yekunzwa yeMOS yakavakirwa gasi sensors sezvo ichigona kutungamira dhizaini yeakakwira performance directional sensors.
Mumakore achangopfuura, MOS gasi sensors dzakagadzirwa nekukurumidza uye mimwe mishumo yakaburitswa paMOS nanostructures55,56,57, kamuri tembiricha gasi sensors58,59, yakakosha MOS sensor materials60,61,62 uye specialty gasi sensors63.Pepa rekuongorora mune Zvimwe Ongororo rinotarisa kujekesa nzira yekunzwa yemagetsi emagetsi emagetsi anobva pane zvemukati zvemuviri uye zvemakemikari zvinhu zveMOS, kusanganisira basa remhepo yeokisijeni 64, basa reheteronanostructures 55, 65 uye kutengesa kutengesa kune heterointerfaces 66. Mukuwedzera , mamwe akawanda ma paramita anokanganisa mashandiro esensor, anosanganisira heterostructure, saizi yezviyo, tembiricha yekushandisa, defect density, nzvimbo dzeokisijeni, uye kunyange ndege dzakavhurika dzekristaro dzezvinhu zvinonzwisa tsitsi25,67,68,69,70,71.72, 73. Zvisinei, iyo (isingawanzotaurwa) chimiro chejometri chechigadziro, chakatemwa nehukama pakati pezvinhu zvekunzwa uye electrode inoshanda, inobatawo zvakanyanya kunzwisisika kwe sensor74,75,76 (ona chikamu 3 kuti uwane mamwe mashoko) .Somuenzaniso, Kumar et al.77 yakashuma masensa maviri egasi akavakirwa pachinhu chimwe chete (semuenzaniso, maviri-layer gasi masensa akavakirwa paTiO2@NiO uye NiO@TiO2) uye akacherekedza shanduko dzakasiyana muNH3 gasi kuramba nekuda kweakasiyana geometries.Nokudaro, paunenge uchiongorora gasi-sensinsibility mechanism, zvakakosha kufunga nezvekugadzirwa kwechigadzirwa.Muongororo iyi, vanyori vanotarisa pane MOS-yakavakirwa nzira dzekuona dzeakasiyana heterogeneous nanostructures uye zvimiro zvemidziyo.Isu tinotenda kuti ongororo iyi inogona kushanda segwara kune vaverengi vanoshuvira kunzwisisa uye kuongorora nzira dzekuona gasi uye inogona kubatsira mukuvandudza remangwana repamusoro pekuita gasi sensors.
Pamusoro pemuonde.1a inoratidza yekutanga modhi yegasi inonzwa meshini yakavakirwa pane imwechete MOS.Sezvo tembiricha ichikwira, kunyura kweokisijeni (O2) mamorekuru ari pamusoro peMOS anokwezva maerekitironi kubva kuMOS uye kugadzira anionic marudzi (akadai seO2- uye O-).Zvadaro, electron depletion layer (EDL) ye n-type MOS kana gomba accumulation layer (HAL) yep-type MOS inobva yaumbwa pamusoro peMOS 15, 23, 78. Kudyidzana pakati peO2 ne MOS inokonzera bhendi rekufambisa repamusoro MOS kukotama kumusoro uye kuumba chipingamupinyi chinogona kuitika.Zvadaro, kana sensor yaiswa kune yakananga gasi, gasi rinoshambadzirwa pamusoro peMOS rinosangana neayoni okisijeni marudzi, angave achikwezva maerekitironi (oxidizing gasi) kana kupa maerekitironi (kuderedza gasi).Electron transfer pakati peyakananga gasi neMOS inogona kugadzirisa hupamhi hweEDL kana HAL30,81 zvichikonzera shanduko mukupikiswa kwese kweMOS sensor.Semuenzaniso, kune gasi rinoderedza, maerekitironi anozotamiswa kubva kune inoderedza gasi kuenda kune n-mhando MOS, zvichikonzera yakaderera EDL uye yakaderera kushomeka, iyo inonzi n-mhando sensor maitiro.Mukupesana, kana p-mhando MOS inoratidzwa kune inoderedza gasi inotaridza p-mhando yekunzwa maitiro, iyo HAL inodzikira uye kuramba kunowedzera nekuda kwekupihwa kwemagetsi.Kune oxidizing magasi, iyo sensor mhinduro inopesana neiyo yekudzikisa magasi.
Nzira dzekutanga dzekuona dzen-mhando uye p-mhando MOS yekudzikisa uye oxidizing magasi b Zvinhu zvakakosha uye physico-kemikari kana zvinhu zvinosanganisirwa mune semiconductor gasi sensors 89
Kunze kweiyo yekutanga nzira yekuona, maitiro ekuona gasi anoshandiswa mune anoshanda gasi sensors akaomarara.Semuenzaniso, kushandiswa chaiko kwegasi sensor kunofanirwa kusangana nezvakawanda zvinodiwa (sekunzwa, kusarudza, uye kugadzikana) zvichienderana nezvinodiwa nemushandisi.Izvi zvinodikanwa zvine hukama zvakanyanya kune zvemuviri uye zvemakemikari zvimiro zvezvinhu zvinonzwisa tsitsi.Semuyenzaniso, Xu et al.71 vakaratidza kuti SnO2 based sensors inosvika pakunzwa kwakanyanya kana crystal diameter (d) yakaenzana kana isingasviki kaviri kureba kweDebye (λD) yeSnO271.Kana d ≤ 2λD, SnO2 inopera zvachose mushure mekushambadza kweO2 molecules, uye mhinduro ye sensor kune inoderedza gasi yakanyanya.Uye zvakare, mamwe akasiyana ma paramita anogona kukanganisa mashandiro e sensor, anosanganisira tembiricha yekushanda, kukanganisa kwekristaro, uye kunyange akafumura ndege dzekristaro dzechinhu chekunzwa.Kunyanya, pesvedzero yekushisa kwekushanda inotsanangurwa nemakwikwi anogona kuitika pakati pemitengo yekushambadza uye desorption yechinangwa gasi, pamwe nepamusoro reactivity pakati peadsorbed gas molecules uye oxygen particles4,82.Mhedzisiro yekuremara kwekristaro yakabatana zvakanyanya nezviri mukati meokisijeni vacancies [83, 84].Iko kushanda kwe sensor kunogonawo kukanganiswa neyakasiyana reactivity yeakavhurika crystal zviso67,85,86,87.Vhura ndege dzekristaro dzine density yakaderera dzinoratidza mamwe masimbi asina kurongeka ane simba repamusoro, izvo zvinosimudzira kushambadza kwepasi uye reactivity88.Tafura 1 inonyora akati wandei akakosha maitiro uye akabatana navo akagadziridzwa maitiro ekuona.Nokudaro, nekugadzirisa zvinhu izvi zvigadziriswe, kushanda kwekuona kunogona kuvandudzwa, uye zvakakosha kuti uone zvinhu zvakakosha zvinokanganisa kushanda kwesensor.
Yamazoe89 naShimanoe et al.68,71 vakaita zvidzidzo zvakawanda pamusoro pemaitiro ezvinyorwa zvekuona sensor uye vakakurudzira zvitatu zvakazvimiririra zvakakosha zvinokonzera kushanda kwesensor, kunyanya receptor basa, transducer basa, uye kushandiswa (Fig. 1b)..Receptor function inoreva kugona kweMOS pamusoro pekubatana nemamorekuru egasi.Iri basa rinonyatsoenderana nemakemikari eMOS uye rinogona kuvandudzwa zvakanyanya nekuunza vagamuchiri vekunze (semuenzaniso, simbi NPs uye mamwe MOS).Basa retransducer rinoreva kukwanisa kushandura maitiro pakati pegasi neMOS pamusoro pechiratidzo chemagetsi chinotungamirirwa nemiganhu yezviyo zveMOS.Saka, basa rekunzwa rinokanganiswa zvakanyanya neMOC particle size uye density yevatorwa vanogamuchira.Katoch et al.90 vakashuma kuti kuderedzwa kwekukura kwezviyo kweZnO-SnO2 nanofibrils kwakaguma nekuumbwa kwehuwandu hwehterojunctions uye kuwedzera kwekunzwa kwekunzwa, kunoenderana nekushanda kwetransducer.Wang et al.91 akaenzanisa zviyo zvakasiyana-siyana zveZn2GeO4 uye akaratidza kuwedzera kwe6.5-fold in sensor sensitivity mushure mekuisa miganhu yezviyo.Utility ndeimwe yakakosha sensor performance factor inotsanangura kuwanikwa kwegasi kune yemukati MOS chimiro.Kana mamorekuru egasi asingakwanisi kupinda uye kuita neMOS yemukati, kunzwa kwe sensor kunoderedzwa.Kubatsira kwacho kunoenderana nekudzika kwekupararira kweimwe gasi, zvinoenderana nehukuru hwepore hwechinhu chekunzwa.Sakai et al.92 yakateedzera kunzwisiswa kwe sensor ku flue magasi uye yakaona kuti ese mamorekuru huremu hwegasi uye pore radius ye sensor membrane inokanganisa kunzwisiswa kwe sensor pane akasiyana gasi diffusion kudzika mu sensor membrane.Nhaurirano iri pamusoro inoratidza kuti high performance gasi sensors inogona kugadzirwa nekuenzanisa uye optimize receptor basa, transducer basa, uye utility.
Basa riri pamusoro rinojekesa maitiro ekuona kweMOS imwe chete uye rinokurukura zvinhu zvakati kuti zvinokanganisa kushanda kweMOS.Pamusoro pezvinhu izvi, gasi sensors yakavakirwa pane heterostructures inogona kuwedzera kuvandudza sensor performance nekuvandudza zvakanyanya sensor uye receptor mabasa.Pamusoro pezvo, heteronanostructures inogona kuwedzera kuvandudza mashandiro e sensor nekusimudzira maitiro ekuita, kudzora kufambisa kwechaji, uye kugadzira mamwe adsorption saiti.Parizvino, masensa akawanda egasi akavakirwa paMOS heteronanostructures akaongororwa kukurukura nzira dzekuwedzera kunzwa95,96,97.Miller et al.55 yakapfupisa nzira dzinoverengeka dzinogona kuvandudza kunzwisiswa kweheteronanostructures, kusanganisira inotsamira pamusoro, inotsamira-inotarisana, uye chimiro-inotsamira.Pakati pavo, iyo interface-inotsamira amplification meshini yakaomesesa kuvhara ese maratidziro ekudyidzana mune imwe dzidziso, sezvo akasiyana masensa akavakirwa pane heteronanostructured zvinhu (semuenzaniso, nn-heterojunction, pn-heterojunction, pp-heterojunction, nezvimwewo) inogona kushandiswa. .Schottky knot).Kazhinji, MOS-based heteronanostructured sensors inogara ichisanganisira maviri kana anopfuura epamusoro sensor maitiro98,99,100.Iyo synergistic mhedzisiro yeiyi nzira dzekusimudzira inogona kukwidziridza kugamuchirwa uye kugadzirisa kwemasaini masaini.Nekudaro, kunzwisisa magadzirirwo ekuona kwema sensors akavakirwa pane heterogeneous nanostructured zvinhu kwakakosha kuitira kubatsira vaongorori kugadzira ezasi-kumusoro gasi sensors zvinoenderana nezvavanoda.Uye zvakare, iyo geometric chimiro chechishandiso chinogonawo kukanganisa zvakanyanya kunzwisiswa kweiyo sensor 74, 75, 76. Kuti uongorore zvakarongeka maitiro eiyo sensor, nzira dzekunzwa dzematatu emidziyo zvimiro zvinoenderana neakasiyana heteronanostructured zvinhu zvichaunzwa. uye yakakurukurwa pasi apa.
Nekukurumidza kukura kweMOS yakavakirwa gasi sensors, akasiyana hetero-nanostructured MOS akakurudzirwa.Iyo yekuchaja yekuendesa kune heterointerface inoenderana neakasiyana Fermi mazinga (Ef) ezvikamu.Pane heterointerface, maerekitironi anofamba kubva kune rumwe rutivi neEf yakakura kuenda kune rumwe rutivi neEf duku kusvikira mazinga avo eFermi asvika pakuenzanisa, uye maburi, zvakasiyana.Zvadaro vatakuri paheterointerface vanopera uye vanoumba chidimbu chinopera.Kana iyo sensor ichinge yafumurwa kune yakananga gasi, iyo heteronanostructured MOS mutakuri wemutakuri anoshanduka, sezvinoita barriers kureba, nekudaro kuwedzera chiratidzo chekuona.Uye zvakare, nzira dzakasiyana dzekugadzira heteronanostructures dzinotungamira kune hukama hwakasiyana pakati pezvishandiso uye maelectrode, izvo zvinotungamira kune akasiyana majeometri emudziyo uye akasiyana ekunzwa masisitimu.Muchidzidzo ichi, isu tinokurudzira matatu ejometri mudziyo zvimiro uye tinokurukura magadzirirwo ekunzwa kune yega yega chimiro.
Kunyangwe heterojunctions ichiita basa rakakosha mukuita gasi kuona kuita, mudziyo geometry weiyo sensor yese inogonawo kukanganisa zvakanyanya maitiro ekuona, sezvo nzvimbo ye sensor conduction chiteshi inotsamira zvakanyanya pane mudziyo geometry.Matatu akajairika geometries eheterojunction MOS midziyo inokurukurwa pano, sezvakaratidzwa muMufananidzo 2. Mumhando yekutanga, maviri MOS akabatanidzwa anogoverwa zvisina tsarukano pakati pemaelectrode maviri, uye nzvimbo yemugero wekuitisa inotsanangurwa neMOS mukuru, yechipiri ndiyo kuumbwa kweakasiyana-siyana nanostructures kubva kuMOS akasiyana, nepo MOS imwe chete yakabatana ne electrode.electrode yakabatana, ipapo conductive channel inowanzowanikwa mukati meMOS uye yakanyatsobatanidzwa kune electrode.Murudzi rwechitatu, zvinhu zviviri zvakanamirwa kune maviri maelectrode akasiyana, achitungamira mudziyo kuburikidza neheterojunction inoumbwa pakati pezvinhu zviviri izvi.
A hyphen pakati pemakomponi (eg "SnO2-NiO") inoratidza kuti zvikamu zviviri izvi zvinongosanganiswa (rudzi I).Chiratidzo che "@" pakati pezvibatanidza zviviri (semuenzaniso "SnO2@NiO") inoratidza kuti scaffold material (NiO) yakashongedzwa neSnO2 yemhando II sensor chimiro.Slash (semuenzaniso "NiO/SnO2") inoratidza mhando III sensor dhizaini.
Pamasensa egasi akavakirwa pamakombikisheni eMOS, zvinhu zviviri zveMOS zvinogovaniswa zvisina tsarukano pakati pemagetsi.Nzira dzakawanda dzekugadzira dzakagadzirwa kuti dzigadzirire MOS composites, kusanganisira sol-gel, coprecipitation, hydrothermal, electrospinning, uye mechanical mixing nzira98,102,103,104.Munguva ichangopfuura, simbi-organic frameworks (MOFs), kirasi ye porous crystalline yakarongeka zvinhu zvinoumbwa nesimbi nzvimbo uye organic linkers, zvakashandiswa sematemplate ekugadzira ane porous MOS composites105,106,107,108.Zvakakosha kuziva kuti kunyange zvazvo chikamu cheMOS composites chakafanana, maitiro ekunzwa anogona kusiyanisa zvakanyanya pakushandisa maitiro akasiyana-siyana ekugadzira.109,110 Somuenzaniso, Gao et al.109 vakagadzira masero maviri anobva kuMoO3 ± SnO2 composites ane atomic ratio yakafanana. ( Mo: Sn = 1: 1.9) uye akawana kuti nzira dzakasiyana dzekugadzira dzinotungamira kune zvakasiyana siyana.Shaposhnik et al.110 yakashuma kuti kuita kwe-co-precipitated SnO2-TiO2 kune gasi H2 kwakasiyana neiyo yemagetsi yakasanganiswa zvinhu, kunyangwe pachiyero chakafanana cheSn/Ti.Musiyano uyu unomuka nekuti hukama pakati peMOP neMOP crystallite saizi inosiyana neyakasiyana nzira dzekubatanidza109,110.Apo hukuru hwezviyo uye chimiro chinoenderana maererano nehuwandu hwevanopa uye semiconductor rudzi, mhinduro inofanira kuramba yakafanana kana geometry yekubatana isingashanduki 110.Staerz et al.111 yakashuma kuti maitiro ekuona eSnO2-Cr2O3 core-sheath (CSN) nanofibers uye pasi SnO2-Cr2O3 CSNs dzaive dzakada kufanana, zvichiratidza kuti nanofiber morphology haipe chero mukana.
Pamusoro peiyo nzira dzakasiyana dzekugadzira, iyo semiconductor mhando dzemaMOSFET maviri akasiyana anokanganisawo kunzwa kwe sensor.Inogona zvakare kukamurwa kuita mapoka maviri zvichienderana nekuti maviri maMOSFETs emhando imwechete yesemiconductor (nn kana pp junction) kana marudzi akasiyana (pn junction).Kana magasi masensa akavakirwa paMOS maumbirwo emhando imwe chete, nekushandura chiyero chemolar cheMOS mbiri, hunhu hwekunzwa hwekunzwa hunoramba husina kuchinjika, uye kunzwa kwe sensor kunosiyana zvichienderana nehuwandu hwenn- kana pp-heterojunctions.Kana chimwe chikamu chakanyanya mumubatanidzwa (eg 0.9 ZnO-0.1 SnO2 kana 0.1 ZnO-0.9 SnO2), nzira yekufambisa inotarwa neMOS inotonga, inonzi homojunction conduction channel 92.Kana zviyero zvezvikamu zviviri zvichifananidzwa, zvinofungidzirwa kuti nzira yekufambisa inotungamirirwa neheterojunction98,102.Yamazoe et al.112,113 yakashuma kuti nzvimbo yeheterocontact yezvikamu zviviri izvi inogona kuvandudza zvakanyanya kunzwisiswa kwe sensor nokuti heterojunction barrier yakaumbwa nekuda kwekushanda kwakasiyana-siyana kwezvikamu zvinogona kudzora zvinobudirira kufamba kwesensor yakaonekwa kune maerekitironi.Akasiyana ambient magasi 112,113.Pamusoro pemuonde.Mufananidzo 3a unoratidza kuti masensa akavakirwa paSnO2-ZnO fibrous hierarchical structures ane akasiyana ZnO zvirimo (kubva pa0 kusvika 10 mol% Zn) anogona kusarudza ethanol.Pakati pavo, sensor inobva kuSnO2-ZnO fibers (7 mol.% Zn) yakaratidza kunzwisiswa kwepamusoro nekuda kwekuumbwa kwenhamba yakawanda yeheterojunctions uye kuwedzera kune imwe nzvimbo yepamusoro, iyo yakawedzera basa rekushandura uye yakagadziridzwa. senitivity 90 Zvisinei, pamwe nekuwedzera kuwedzera kweZnO zvinyorwa kusvika ku10 mol.%, microstructure SnO2-ZnO composite inogona kuputira nzvimbo dzekushanda uye kuderedza sensor sensitivity85.Chimiro chakafanana chinoonekwawo kune masensa anobva kuNiO-NiFe2O4 pp heterojunction composites ane akasiyana Fe / Ni ratios (Fig. 3b)114.
SEM mifananidzo yeSnO2-ZnO fibers (7 mol.% Zn) uye mhinduro ye sensor kune magasi akasiyana-siyana ane huwandu hwe100 ppm pa 260 ° C;54b Mhinduro dzema sensors dzinobva paNiO yakachena uye NiO-NiFe2O4 composites pa 50 ppm yemagasi akasiyana-siyana, 260 ° C;114 (c) Schematic diagram yenhamba yemanodhi mu xSnO2-(1-x) Co3O4 kuumbwa uye kuenderana kupikisa uye sensitivity reactions ye xSnO2-(1-x) Co3O4 kuumbwa pa10 ppm CO, acetone, C6H6 uye SO2 gasi pa350 °C nekushandura molar reshiyo yeSn/Co 98
Iyo pn-MOS macomposites anoratidza akasiyana sensitivity maitiro zvinoenderana neatomu reshiyo yeMOS115.Kazhinji, maitiro ekunzwa eMOS macomposites anonyanya kutsamira pane iyo MOS inoita seyo yekutanga conduction chiteshi che sensor.Nokudaro, zvakakosha zvikuru kuratidza huwandu hwehuwandu uye nanostructure yemakompositi.Kim et al.98 vakasimbisa mhedziso iyi nekugadzira nhevedzano ye xSnO2 ± (1-x) Co3O4 inoumbwa nanofibers kuburikidza ne electrospinning uye kudzidza masensor adzo.Vakacherechedza kuti maitiro eSnO2-Co3O4 composite sensor akachinja kubva ku-n-type kusvika p-type nekuderedza chikamu cheSnO2 (Fig. 3c) 98.Mukuwedzera, heterojunction-inotonga sensors (yakavakirwa pa0.5 SnO2-0.5 Co3O4) yakaratidza huwandu hwepamusoro hwekutapurirana kweC6H6 kana ichienzaniswa nehomojunction-inotonga sensors (semuenzaniso, yakakwirira SnO2 kana Co3O4 sensors).Iyo yekuzvarwa yakakwira yekupokana kwe0.5 SnO2-0.5 Co3O4 yakavakirwa sensor uye kugona kwayo kukuru kugadziridza iyo yese sensor kuramba kunobatsira pakunzwa kwayo kwepamusoro kuC6H6.Uye zvakare, kukanganiswa kwelatisi kunokanganisa kunobva kuSnO2-Co3O4 heterointerfaces inogona kugadzira yakasarudzika adsorption nzvimbo dzemamorekuru egasi, nekudaro ichiwedzera sensor mhinduro109,116.
Pamusoro pe semiconductor-type MOS, kubata maitiro eMOS macomposites anogona zvakare kugadzirwa uchishandisa chemistry yeMOS-117.Huo et al.117 vakashandisa nzira iri nyore yekubika soak kugadzirira Co3O4-SnO2 composites uye vakaona kuti paCo/Sn molar ratio ye10%, sensor yakaratidza p-type yekuona mhinduro kuH2 uye n-mhando yekunzwa ku. H2.mhinduro.Sensor mhinduro kune CO, H2S uye NH3 magasi inoratidzwa muFigure 4a117.Pazviyero zvakaderera zveCo/Sn, homojunctions yakawanda inoumba paSnO2±SnO2 nanograin miganhu uye inoratidza n-type sensor mhinduro kuH2 (Figs. 4b,c)115.Nekuwedzera kwechiyero cheCo/Sn kusvika pagumi mol.%, panzvimbo yeSnO2-SnO2 homojunctions, dzakawanda Co3O4-SnO2 heterojunctions dzakagadzirwa panguva imwe chete (Fig. 4d).Sezvo Co3O4 isingashandisi maererano neH2, uye SnO2 inobata zvakasimba neH2, maitiro eH2 ane ionic oxygen marudzi anonyanya kuitika pamusoro peSnO2117.Naizvozvo, maerekitironi anotamira kuSnO2 uye Ef SnO2 anochinja kune conduction bhendi, nepo Ef Co3O4 inoramba isingachinji.Somugumisiro, kushorwa kwe sensor kunowedzera, zvichiratidza kuti zvinhu zvine high Co / Sn ratio zvinoratidza p-type sensing behavior (Fig. 4e).Kusiyana neizvi, CO, H2S, uye NH3 magasi anopindirana neaonic okisijeni marudzi paSnO2 uye Co3O4 nzvimbo, uye ma electrons anofamba kubva kune gasi kusvika kune sensor, zvichiita kuti kuderera kwehupinimu hurefu uye n-type senitivity (Fig. 4f)..Iyi yakasiyana-siyana sensor maitiro inokonzerwa nekusiyana reactivity yeCo3O4 ine magasi akasiyana, iyo yakasimbiswa zvakare naYin et al.118 .Saizvozvowo, Katoch et al.119 yakaratidza kuti maumbirwo eSnO2-ZnO ane sarudzo yakanaka uye kunzwa kwakanyanya kuH2.Hunhu uhu hunoitika nekuti maatomu eH anogona kushambadzwa zviri nyore kune O zvinzvimbo zveZnO nekuda kwekusanganiswa kwakasimba pakati pe s-orbital yeH uye p-orbital yeO, iyo inotungamira kune metallization yeZnO120,121.
a Co/Sn-10% dynamic resistance curves for akajairika kuderedza magasi akadai seH2, CO, NH3 uye H2S, b, c Co3O4/SnO2 composite sensing mechanism diagram yeH2 pazasi % m.Co/Sn, df Co3O4 Mechanism yekuona yeH2 uye CO, H2S uye NH3 ine yakakwira Co/Sn/SnO2 composite
Naizvozvo, isu tinokwanisa kuvandudza kunzwisiswa kweI-mhando sensor nekusarudza nzira dzakakodzera dzekugadzira, kuderedza saizi yezviyo zvemakompositi, uye optimize molar ratio yeMOS macomposites.Uye zvakare, kunzwisisa kwakadzama kwekemikari yezvinhu zvinonzwisa tsitsi kunogona kuwedzera kusarudzwa kwe sensor.
Type II sensor zvimiro ndeimwe yakakurumbira sensor chimiro chinogona kushandisa akasiyana heterogeneous nanostructured zvinhu, kusanganisira imwe "tenzi" nanomaterial uye yechipiri kana yechitatu nanomaterial.Semuenzaniso, imwe-dimensional kana maviri-dimensional zvinhu zvakashongedzwa nanoparticles, core-shell (CS) uye multilayer heteronanostructured zvinhu zvinowanzoshandiswa mumhando II sensor structures uye ichakurukurwa zvakadzama pasi apa.
Nokuda kwekutanga heteronanostructure material (yakashongedzwa heteronanostructure), sezvinoratidzwa mumufananidzo 2b (1), nzira dzekufambisa dze sensor dzinobatanidzwa nechinhu chepasi.Pamusana pekugadzirwa kweheterojunctions, nanoparticles yakagadziridzwa inogona kupa nzvimbo dzakawanda dzekugadzirisa gasi adsorption kana desorption, uye inogonawo kuita sezvigadziridzo zvekuvandudza sensing performance109,122,123,124.Yuan et al.41 vakacherechedza kuti kushongedza WO3 nanowires neCeO2 nanodots kunogona kupa mamwe adsorption nzvimbo paCeO2@WO3 heterointerface uye CeO2 pamusoro uye kugadzira mamwe chemisorbed oxygen marudzi kuti aite neacetone.Gunawan et al.125. An ultra-high sensitivity acetone sensor inobva kune imwe-dimensional Au @ α-Fe2O3 yakarongedzerwa uye yakaonekwa kuti kunzwisiswa kwenzwi kunodzorwa nekushandiswa kweO2 molecules semhepo yeokisijeni.Kuvapo kweAu NPs kunogona kuita sechinhu chinokurudzira kupatsanurwa kwemamorekuru eokisijeni mulatisi okisijeni kune oxidation yeacetone.Migumisiro yakafanana yakawanikwa naChoi et al.9 apo Pt catalyst yakashandiswa kupatsanura adsorbed okisijeni mamorekuru muiyo ionized okisijeni marudzi uye kuwedzera kunzwira tsitsi kune acetone.Muna 2017, boka rimwe chete rekutsvakurudza rakaratidza kuti bimetallic nanoparticles inonyanya kushanda mu catalysis pane imwe chete inokudzwa simbi nanoparticles, sezvinoratidzwa mumufananidzo 5126. avhareji saizi isingasviki 3 nm.Zvadaro, uchishandisa nzira ye electrospinning, PtM @ WO3 nanofibers yakawanikwa kuti iwedzere kunzwisisika uye kusarudza kune acetone kana H2S (Fig. 5b-g).Munguva pfupi yapfuura, single atomu catalysts (SACs) yakaratidza yakanakisa catalytic kuita mumunda we catalysis uye kuongorora gasi nekuda kwehunyanzvi hwekushandisa maatomu uye tuned zvemagetsi zvimiro127,128.Shin et al.129 yakashandisa Pt-SA anchored carbon nitride (MCN), SnCl2 nePVP nanosheets senzvimbo dzemakemikari kugadzirira Pt@MCN@SnO2 inline fibers kuti ionekwe gasi.Zvisinei nezvakadzikira zvemukati zvePt@MCN (kubva pa0.13 wt.% kusvika 0.68 wt.%), mabatirwo egaseous formaldehyde Pt@MCN@SnO2 akakwirira pane mamwe mareferenzi samples (pure SnO2, MCN@SnO2 uye Pt NPs@ SnO2)..Uku kuita kwakanakisa kwekuona kunogona kuverengerwa nehukuru hweatomu hwePt SA catalyst uye kushomeka kuvharika kweSnO2129 inoshanda masaiti.
Apoferritin-yakatakura encapsulation nzira yekuwana PtM-apo (PtPd, PtRh, PtNi) nanoparticles;dynamic gas sensitive properties ye bd pristine WO3, PtPd@WO3, PtRn@WO3, uye Pt-NiO@WO3 nanofibers;yakavakirwa, semuenzaniso, pane yekusarudza zvivakwa zvePtPd@WO3, PtRn@WO3 uye Pt-NiO@WO3 nanofiber sensors kune 1 ppm yekukanganisa gasi 126.
Mukuwedzera, heterojunctions yakaumbwa pakati pezvipfeko zve scaffold uye nanoparticles zvinogonawo kunyatsogadzirisa nzira dzekufambisa kuburikidza neradial modulation mechanism yekuvandudza sensor performance130,131,132.Pamusoro pemuonde.Mufananidzo 6a unoratidza maitiro ekunzwa kweSnO2 yakachena uye Cr2O3 @ SnO2 nanowires yekudzikisa uye oxidizing magasi uye inoenderana sensor maitiro131.Kuenzaniswa neyakachena SnO2 nanowires, mhinduro yeCr2O3@SnO2 nanowires pakudzikisa magasi inowedzerwa zvakanyanya, nepo mhinduro kumagasi eoxidizing ichiwedzera.Izvi zviitiko zvine hukama zvakanyanya nekuderedzwa kwenzvimbo kwemaitiro ekuitisa eSnO2 nanowires muradial kutungamira kweyakaumbwa pn heterojunction.Iyo sensor inopikisa inogona kungogadziriswa nekushandura EDL hupamhi pamusoro peiyo yakachena SnO2 nanowires mushure mekuratidzwa kwekudzikisa uye oxidizing magasi.Zvisinei, nokuda kweCr2O3@SnO2 nanowires, yekutanga DEL yeSnO2 nanowires mumhepo inowedzerwa kana ichienzaniswa neSnO2 nanowires yakachena, uye nzira yekufambisa inodzvinyirirwa nekuda kwekugadzirwa kweheterojunction.Nokudaro, kana iyo sensor inoratidzwa kune gasi rinoderedza, maerekitironi akabatwa anobudiswa muSnO2 nanowires uye EDL inoderedzwa zvakanyanya, zvichiita kuti iwedzere kunzwisisika kupfuura yakachena SnO2 nanowires.Sezvineiwo, kana uchichinjira kune oxidizing gasi, kuwedzera kweDEL kunogumira, zvichikonzera kuderera kwekunzwa.Migumisiro yakafanana yemhinduro yakaonekwa naChoi et al., 133 umo SnO2 nanowires yakashongedzwa ne-p-type WO3 nanoparticles yakaratidza zvakanyanya kuvandudzwa kwekunzwa kwekuderedza magasi, nepo n-yakashongedzwa SnO2 sensors yakanga yavandudza kunzwa kune oxidizing magasi.TiO2 nanoparticles (Fig. 6b) 133. Ichi chigumisiro chinonyanya kukonzerwa nemabasa akasiyana-siyana eSnO2 uye MOS (TiO2 kana WO3) nanoparticles.Mune p-mhando (n-mhando) nanoparticles, iyo conduction chiteshi cheiyo framework zvinhu (SnO2) inowedzera (kana zvibvumirano) munzira yeradial, uyezve, pasi pechiito chekudzikisa (kana oxidation), kuwedzera kuwedzera (kana kupfupisa) yemugero wekufambisa weSnO2 - rib) yegesi (Fig. 6b).
Radial modulation mechanism yakagadziridzwa neLF MOS.Pfupiso yemhinduro dzegasi ku10 ppm kuderedza uye oxidizing magasi akavakirwa pane yakachena SnO2 uye Cr2O3 @ SnO2 nanowires uye inoenderana inonzwa meshini schematic diagram;uye zvirongwa zvinoenderana zveWO3@SnO2 nanorods uye nzira yekuona133
Mune bilayer uye multilayer heterostructure zvishandiso, conduction chiteshi chechishandiso chinodzorwa nedhiri (kazhinji iyo yepasi layer) yakanangana nemagetsi, uye heterojunction inoumbwa pakusangana kwezvikamu zviviri zvinogona kudzora conductivity yepasi pasi. .Nokudaro, kana magasi achibatana nepamusoro pepamusoro, anogona kukanganisa zvakanyanya nzira dzekufambisa dzezasi uye kupikisa 134 yemudziyo.Somuenzaniso, Kumar et al.77 yakashuma maitiro akapesana eTiO2@NiO uye NiO@TiO2 akaturikidzana maviri eNH3.Musiyano uyu unomuka nekuti nzira dzekufambisa dzema sensors maviri anotonga muzvikamu zvezvinhu zvakasiyana (NiO neTiO2, zvichiteerana), uyezve misiyano mumatanho epasi ekufambisa akasiyana77.
Bilayer kana multilayer heteronanostructures anowanzo kugadzirwa ne sputtering, atomic layer deposition (ALD) uye centrifugation56,70,134,135,136.Ukobvu hwefirimu uye nzvimbo yekubatanidza yezvinhu zviviri izvi zvinogona kudzorwa zvakanaka.Mifananidzo 7a uye b inoratidza NiO@SnO2 uye Ga2O3@WO3 nanofilms yakawanikwa nekupuruzira kuti uwane ethanol135,137.Nekudaro, idzi nzira dzinowanzo kuburitsa akafuratira mafirimu, uye aya akafuratira mafirimu haanzwe zvakanyanya kupfuura 3D nanostructured zvinhu nekuda kwekudzika kwavo kwakananga nzvimbo uye gasi permeability.Nokudaro, chirongwa chemvura-chikamu chekugadzira mafirimu e-bilayer ane maitiro akasiyana-siyana akakurudzirwawo kuti avandudze kushanda kwemaonero nekuwedzera nzvimbo chaiyo41,52,138.Zhu et al139 akabatanidza sputtering uye hydrothermal techniques kugadzira zvakanyanya kurairwa ZnO nanowires pamusoro peSnO2 nanowires (ZnO@SnO2 nanowires) yeH2S yekuona (Fig. 7c).Mhinduro yayo kune 1 ppm H2S ndeye 1.6 nguva yakakwirira kupfuura iyo sensor yakavakirwa pane yakasvibiswa ZnO@SnO2 nanofilms.Liu et al.52 yakashuma kushanda kwepamusoro kweH2S sensor inoshandisa nhanho mbiri-in situ kemikari deposition nzira yekugadzira hierarchical SnO2 @ NiO nanostructures inoteverwa nemafuta annealing (Fig. 10d).Kuenzaniswa neyakajairwa sputtered SnO2 @ NiO bilayer mafirimu, kuita kwekunzwa kweSnO2 @ NiO hierarchical bilayer chimiro kunovandudzwa zvakanyanya nekuda kwekuwedzera kweiyo nzvimbo52,137.
Double layer gasi sensor yakavakirwa paMOS.NiO@SnO2 nanofilm yekuona ethanol;137b Ga2O3@WO3 nanofilm yekuona ethanol;135c yakaodha zvakanyanya SnO2@ZnO bilayer hierarchical chimiro chekuonekwa kweH2S;139d SnO2@NiO bilayer hierarchical chimiro chekutsvaga H2S52.
Mumhando II zvishandiso zvinoenderana ne-core-shell heteronanostructures (CSHNs), iyo sensing mechanism yakanyanya kuoma, sezvo nzira dzekufambisa hadzina kuganhurirwa kugoko remukati.Zvese zviri zviviri nzira yekugadzira uye ukobvu (hs) wepakeji inogona kuona nzvimbo yeicho conductive chiteshi.Semuenzaniso, kana uchishandisa nzira dzepasi-up synthesis, nzira dzekufambisa dzinowanzoganhurwa kune yemukati core, iyo yakafanana muchimiro kune maviri-layer kana multilayer mudziyo zvimiro (Fig. 2b (3)) 123, 140, 141, 142, 143. Xu et al.144 yakashuma nzira yepasi-kumusoro yekuwana CSHN NiO@α-Fe2O3 uye CuO@α-Fe2O3 nekuisa chidimbu cheNiO kana CuO NPs paα-Fe2O3 nanorods umo conduction chiteshi chaiganhurwa nechikamu chepakati.(nanorods α-Fe2O3).Liu et al.142 yakabudirirawo kudzikamisa chiteshi chekufambisa kune chikamu chikuru cheCSHN TiO2 @ Si nekuisa TiO2 pane akagadzirirwa arrays esilicon nanowires.Naizvozvo, maitiro ayo ekunzwa (p-mhando kana n-mhando) anoenderana chete neiyo semiconductor mhando yesilicon nanowire.
Nekudaro, mazhinji akashumwa CSHN-based sensors (Fig. 2b (4)) akagadzirwa nekuendesa hupfu hwezvakagadzirwa CS zvinhu pamachipisi.Muchiitiko ichi, nzira yekufambisa ye sensor inobatwa nehupamhi hweimba (hs).Boka raKim rakaongorora mashandiro ehs pakuonekwa kwegasi uye rakakurudzira nzira yekuona ingangoita100,112,145,146,147,148. Zvinotendwa kuti zvinhu zviviri zvinobatsira pakunzwa kwechimiro chechimiro ichi: (1) radial modulation yeEDL yegoko uye (2) mhepo yemagetsi smearing effect (Fig. 8) 145. Vatsvakurudzi vakataura kuti nzira yekufambisa. yevatakuri inonyanya kuvharirwa kune shell layer kana hs> λD yegoko layer145. Zvinotendwa kuti zvinhu zviviri zvinobatsira pakunzwa kwechimiro chechimiro ichi: (1) radial modulation yeEDL yegoko uye (2) mhepo yemagetsi smearing effect (Fig. 8) 145. Vatsvakurudzi vakataura kuti nzira yekufambisa. yevatakuri inonyanya kuvharirwa kune shell layer kana hs> λD yegoko layer145. Считается, что в механизме восприятия этой структуры участвуют два фактора: (1) радиальная модуляция ДЭС оболочки и (2) эффект размытия электрического поля (рис. 8) 145. Исследователи отметили, что канал проводимости носителей в основном приурочено к оболочке, когда hs > λD оболочки145. Zvinotendwa kuti zvinhu zviviri zvinobatanidzwa mumagadzirirwo ekuona kwechimiro ichi: (1) radial modulation ye EDL yehoko uye (2) mhedzisiro yekusvibisa munda wemagetsi (Fig. 8) 145. Vatsvakurudzi vakacherechedza kuti iyo inotakura conduction chiteshi inonyanya kuvharirwa kugoko kana hs> λD magomba145.Zvinotendwa kuti zvinhu zviviri zvinobatsira pakuona maitiro echigadziro ichi: (1) radial modulation yeDEL yegomba uye (2) mhedzisiro yemagetsi smearing (Fig. 8) 145.研究人员提到传导通道当壳层的hs > λD145 时，载流子的数量主要局限于壳层. > λD145 时，载流子的数量主要局限于壳层. Исследователи отметили, что канал проводимости Когда hs > λD145 оболочки, количество носителей в основном ограничено оболочкой. Vatsvakurudzi vakaona kuti conduction channel Kana hs> λD145 yegoko, nhamba yevatakuri inonyanya kuderedzwa negoko.Nokudaro, mukugadzirisa kwekugadzirisa kwe sensor inobva kuCSHN, radial modulation ye cladding DEL inokunda (Fig. 8a).Zvisinei, pa hs ≤ λD yegoko, zvidimbu zveokisijeni zvakashambadzirwa negoko uye heterojunction yakagadzirwa pa CS heterojunction inopera zvachose ma electrons. Naizvozvo, chiteshi chekufambisa hachina kungowanikwa mukati meganda reganda asiwo zvishoma muchikamu chepakati, kunyanya kana hs < λD yegoko rakadzika. Naizvozvo, chiteshi chekufambisa hachina kungowanikwa mukati meganda reganda asiwo zvishoma muchikamu chepakati, kunyanya kana hs < λD yegoko rakadzika. Поэтому канал проводимости располагается не только внутри оболочечного слоя, но и частично в сердцевинной части, особенности приговодил особенное приготовил ее. Naizvozvo, chiteshi chekufambisa hachiwanikwe chete mukati meganda reganda, asiwo chikamu muchikamu chepakati, kunyanya pa hs < λD yeganda layer.因此，传导通道不仅位于壳层内部，而且部分位于芯部，尤其是当壳层的hs < λD 时. hs < λD 时. Поэтому канал проводимости располагается не только внутри оболочки, но и частично в сердцевине, особенно при hs < λD облочки. Naizvozvo, chiteshi chekufambisa hachiwanikwe chete mukati megoko, asiwo chikamu mukati, kunyanya pa hs < λD yegoko.Muchiitiko ichi, zvose zvakapera zvakakwana erekitironi goko uye chikamu chepakati chepakati chepakati chinobatsira kugadzirisa kupikisa kweCSHN yose, zvichiita kuti pave nemagetsi emuswe wemuswe (Fig. 8b).Zvimwe zvidzidzo zvakashandisa EDL vhoriyamu chikamu chepfungwa pachinzvimbo chemagetsi munda muswe kuongorora hs effect100,148.Tichifunga nezvezvipo zviviri izvi, iyo yakazara modulation yeCSHN kuramba inosvika pakukosha kwayo kukuru kana hs inofananidzwa nesheath λD, sezvakaratidzwa mumufananidzo 8c.Naizvozvo, iyo yakakwana hs yeCSHN inogona kunge iri padyo negoko λD, iyo inopindirana neongororo yekuongorora99,144,145,146,149.Ongororo dzinoverengeka dzakaratidza kuti hs inogonawo kukanganisa kunzwisiswa kweCSHN-based pn-heterojunction sensors40,148.Li et al.148 uye Bai et al.40 yakaongorora zvakarongeka mhedzisiro yehs pakuita kwepn-heterojunction CSHN sensors, seTiO2@CuO uye ZnO@NiO, nekushandura kutenderera kweALD.Nekuda kweizvozvo, hunhu hwekunzwa hwakashanduka kubva p-mhando kuenda kun-mhando nekuwedzera hs40,148.Iyi maitiro imhaka yekuti pakutanga (ine nhamba shoma yeAlD cycles) heterostructures inogona kuonekwa seyakagadziridzwa heteronanostructures.Nekudaro, iyo conduction chiteshi inoganhurwa neiyo core layer (p-type MOSFET), uye sensor inoratidza p-mhando yekuona maitiro.Sezvo huwandu hwekutenderera kweALD hunowedzera, iyo cladding layer (n-type MOSFET) inova quasi-inoenderera uye inoita senge conduction chiteshi, zvichikonzera n-mhando yekunzwa.Kufanana kwekunzwa kwekuchinja maitiro kwakashumwa kune pn branched heteronanostructures 150,151.Zhou et al.150 yakaongorora kunzwisiswa kweZn2SnO4@Mn3O4 branched heteronanostructures nekudzora Zn2SnO4 zviri pamusoro peMn3O4 nanowires.Apo Zn2SnO4 nuclei yakaumbwa pamusoro peMn3O4, p-type senitivity yakaonekwa.Nekuwedzera kwekuwedzera mune zveZn2SnO4 zvemukati, iyo sensor yakavakirwa pane branched Zn2SnO4@Mn3O4 heteronanostructures inoshandura kune n-mhando sensor maitiro.
Tsanangudzo yemafungiro maviri-inoshanda sensor mechanic yeCS nanowires inoratidzwa.a Resistance modulation nekuda kweradial modulation yeelectron-depleted shells, b Negative mhedzisiro yekuzora paresitoreti modulation, uye c Total resistance modulation yeCS nanowires nekuda kwekusanganiswa kwezvose mhedzisiro 40.
Mukupedzisa, mhando II ma sensors anosanganisira akawanda akasiyana hierarchical nanostructures, uye sensor performance inotsamira zvakanyanya pakurongeka kweiyo conductive chiteshi.Naizvozvo, zvakakosha kudzora chinzvimbo cheiyo conduction chiteshi che sensor uye kushandisa yakakodzera heteronanostructured MOS modhi yekudzidza yakawedzera sensing nzira yemhando II sensors.
Type III sensor zvimiro hazvina kunyanya kuwanda, uye chiteshi chekufambisa chakavakirwa pane heterojunction inoumbwa pakati pemasemiconductors maviri akabatana nemagetsi maviri, zvichiteerana.Yakasarudzika madhizaini zvimiro anowanzo kuwanikwa kuburikidza ne micromachining matekiniki uye maitiro avo ekunzwa akasiyana zvakanyanya kubva kune maviri apfuura ma sensor zvimiro.Iyo IV curve yeType III sensor inowanzo ratidza maitiro ekugadzirisa nekuda kweheterojunction formation48,152,153.Iyo I-V hunhu curve yeyakanaka heterojunction inogona kutsanangurwa ne thermionic mechanism yekuburitsa maelectron pamusoro pehurefu hweheterojunction barrier152,154,155.
apo Va ndiyo bias voltage, A ndiyo nzvimbo yemudziyo, k ndiyo Boltzmann inoramba iripo, T ndiyo yakakwana tembiricha, q ndiyo inotakura mutakuri, Jn uye Jp igomba uye maerekitironi diffusion ano densities, zvichiteerana.IS inomiririra reverse saturation ikozvino, inotsanangurwa se: 152,154,155
Nokudaro, iyo yose ikozvino yepn heterojunction inoenderana nekuchinja kwehuwandu hwekutakura vatakuri uye kuchinja kwekukwirira kwechivharo cheheterojunction, sezvinoratidzwa mu equations (3) uye (4) 156
apo nn0 ne pp0 ndiwo uwandu hwemaerekitironi (maburi) mu n-type (p-type) MOS, \(V_{bi}^0\) ndiyo inovakirwa mukati, Dp (Dn) idiffusion coefficient ye maerekitironi (maburi), Ln (Lp) ndiwo kureba kwemaerekitironi (maburi), ΔEv (ΔEc) ndiko kushanduka kwesimba kwebhendi revalence (conduction band) paheterojunction.Kunyangwe density iripo ichienderana nedensity yekutakura, iri exponentially inversely proportional ne \(V_{bi}^0\).Nokudaro, kuchinja kwese kwehuwandu hwemazuva ano hunoenderana nekugadzirisa kwehurefu hweheterojunction barrier.
Sezvambotaurwa pamusoro apa, kusikwa kwe-hetero-nanostructured MOSFETs (somuenzaniso, mhando I uye mhando II michina) inogona kuvandudza zvakanyanya kushanda kwe sensor, panzvimbo yezvikamu zvega.Uye yemhando III zvishandiso, iyo heteronanostructure mhinduro inogona kuva yakakwirira kudarika maviri components48,153 kana yakakwirira kupfuura imwe component76, zvichienderana nemakemikari ezvinyorwa.Mishumo yakawanda yakaratidza kuti mhinduro yeheteronanostructures yakakwirira kudarika iyo yechikamu chimwe chete kana chimwe chezvikamu zvisinganzwisisi kune chinangwa gas48,75,76,153.Muchiitiko ichi, gasi rinotarirwa richapindirana chete nehupamhi hwepamusoro uye hunokonzera kuchinja kweEf yehutano hwakaoma uye kuchinja kwehupamhi hwehterojunction barrier.Ipapo iyo yakazara ikozvino yemudziyo ichachinja zvakanyanya, sezvo inopesana nehupamhi hweheterojunction barrier maererano ne equation.(3) uye (4) 48,76,153.Nekudaro, kana zvese zviri zviviri n-mhando uye p-mhando zvikamu zvine hanya kune yakananga gasi, kuita kwekuona kunogona kuve kumwe pakati.José et al.76 akabudisa porous NiO / SnO2 firimu NO2 sensor kuburikidza nekuputika uye yakaona kuti sensor senitivity yakanga yakakwirira chete kupfuura iyo yeNiO based sensor, asi yakaderera kupfuura iyo yeSnO2 based sensor.sensor.Ichi chiitiko chinokonzerwa nenyaya yekuti SnO2 neNiO vanoratidza maitiro akasiyana kune NO276.Zvakare, nekuti izvo zvikamu zviviri zvine zvakasiyana gasi sensitivities, zvinogona kuve nemaitiro akafanana ekuona oxidizing uye kuderedza magasi.Somuenzaniso, Kwon et al.157 yakaronga NiO / SnO2 pn-heterojunction gas sensor ne oblique sputtering, sezvinoratidzwa mumufananidzo 9a.Zvinofadza kuti NiO / SnO2 pn-heterojunction sensor yakaratidza kufanana kwekunzwa kweH2 uye NO2 (Fig. 9a).Kugadzirisa mhedzisiro iyi, Kwon et al.157 yakaongorora zvakarongeka kuti NO2 neH2 inoshandura sei kutakura kwekutakura uye kugadzirisa \ (V_{bi} ^0 \) yezvinhu zvose zviri zviviri uchishandisa IV-characteristics uye kuenzanisa kwekombiyuta (Fig. 9bd).Mifananidzo 9b uye c inoratidza kukwanisa kweH2 uye NO2 kushandura kutakura density ye sensors inobva p-NiO (pp0) uye n-SnO2 (nn0), maererano.Vakaratidza kuti pp0 ye-p-type NiO yakachinja zvishoma mumamiriro eNO2, apo yakashandura zvakanyanya munharaunda yeH2 (Fig. 9b).Zvisinei, kune n-mhando SnO2, nn0 inobata nenzira yakasiyana (Fig. 9c).Kubva pamigumisiro iyi, vanyori vakagumisa kuti apo H2 yakashandiswa kune sensor inobva kuNiO / SnO2 pn heterojunction, kuwedzera kwen nn0 kwakakonzera kuwedzera kweJn, uye \ (V_{bi} ^0\) kuderera kwemhinduro (Fig. 9d).Mushure mekutsvaga kuNO2, zvose kuderera kukuru mu nn0 muSnO2 uye kuwedzera kuduku kwepp0 muNiO kunotungamirira kuderera kukuru mu \ (V_{bi} ^ 0 \), iyo inovimbisa kuwedzera kwekunzwa kwekunzwa (Fig. 9d ) 157 Mukupedzisa, kuchinja kwehuwandu hwevatakuri uye \ (V_{bi} ^0\) kunotungamirira kukuchinja kwehuwandu hwemazuva ano, izvo zvinowedzera kukanganisa kukwanisa kwekuona.
Iyo yekunzwa mashandiro eiyo gasi sensor yakavakirwa pachimiro cheiyo Type III mudziyo.Kuongorora electron microscopy (SEM) cross-sectional mifananidzo, p-NiO/n-SnO2 nanocoil device uye sensor properties ye p-NiO/n-SnO2 nanocoil heterojunction sensor pa 200 ° C yeH2 uye NO2;b , cross-sectional SEM ye c-device, uye simulation migumisiro yemudziyo une p-NiO b-layer uye n-SnO2 c-layer.Iyo b p-NiO sensor uye c n-SnO2 sensor chiyero uye inoenderana neI-V maitiro mumhepo yakaoma uye mushure mekusangana neH2 uye NO2.Mepu ine mativi maviri-ye-b-hole density mup-NiO uye mepu ye-c-electrons mu n-SnO2 layer ine chiyero cheruvara yakaumbwa uchishandisa Sentaurus TCAD software.d Simulation mhedzisiro inoratidza 3D mepu yep-NiO/n-SnO2 mumhepo yakaoma, H2 uye NO2157 munharaunda.
Pamusoro pemakemikari echigadzirwa chacho pachayo, chimiro cheType III mudziyo unoratidza mukana wekugadzira wega-powered gasi sensors, izvo zvisingagoneke neType I uye Type II zvishandiso.Nekuda kwenzvimbo yavo yemagetsi yemagetsi (BEF), pn heterojunction diode zvimiro zvinowanzoshandiswa kugadzira mafotovoltaic zvishandiso uye kuratidza mukana wekugadzira wega-powered photoelectric gasi sensors pakudziya kwekamuri pasi pekuvhenekerwa74,158,159,160,161.BEF paheterointerface, inokonzerwa nemusiyano weFermi mazinga ezvishandiso, inobatsirawo mukuparadzaniswa kwe electron-hole pairs.Kubatsira kwe-self-powered photovoltaic gas sensor ndiyo yakaderera simba rekushandisa sezvo inogona kutora simba rechiedza chinovhenekera uye zvino inozvidzora pachayo kana zvimwe zviduku zviduku pasina kudiwa kwekunze kwesimba remagetsi.Semuenzaniso, Tanuma neSugiyama162 vakagadzira NiO/ZnO pn heterojunctions semasero ezuva kuti aite SnO2-based polycrystalline CO2 sensors.Gad et al.74 yakashuma self-powered photovoltaic gas sensor inobva paSi / ZnO @ CdS pn heterojunction, sezvakaratidzwa muFig. 10a.Vertically oriented ZnO nanowires akakurira zvakananga p-type silicon substrates kuti iite Si/ZnO pn heterojunctions.Ipapo CdS nanoparticles yakagadziridzwa pamusoro peZnO nanowires nemakemikari pamusoro pekugadzirisa.Pamusoro pemuonde.10a inoratidza off-line Si/ZnO@CdS sensor mhinduro mhinduro dzeO2 uye ethanol.Pasi pekuvhenekera, iyo yakavhurika-circuit voltage (Voc) nekuda kwekuparadzaniswa kwe electron-hole pairs panguva yeBEP paSi/ZnO heterointerface inowedzera mutsara nenhamba yeakabatana diodes74,161.Voc inogona kumiririrwa ne equation.(5) 156,
uko ND, NA, uye Ni ari iwo maratidziro evanopa, vanogamuchira, uye mukati mekutakura vatakuri, zvakateerana, uye k, T, uye q ndiwo maparamita akafanana semuequation yapfuura.Kana vakaiswa kune oxidizing magasi, vanobvisa maerekitironi kubva kuZnO nanowires, izvo zvinotungamira mukudzikira mu \(N_D^{ZnO}\) uye Voc.Kusiyana neizvi, kuderedzwa kwegesi kwakaguma nekuwedzera kweVoc (Fig. 10a).Pakushongedza ZnO neCdS nanoparticles, ma electronexcited electrons muCdS nanoparticles anobayiwa mubhendi rekufambisa reZnO uye anodyidzana negasi rakashambadzirwa, zvichibva zvawedzera maonero e74,160.Imwe yakafanana-inogonesa photovoltaic gas sensor yakavakirwa paSi / ZnO yakashumwa naHoffmann et al.160, 161 (Mufananidzo 10b).Iyi sensor inogona kugadzirwa uchishandisa mutsara weamine-functionalized ZnO nanoparticles ([3-(2-aminoethylamino) propyl] trimethoxysilane) (amino-functionalized-SAM) uye thiol ((3-mercaptopropyl) -functionalized, kugadzirisa basa rebasa. yechinangwa chegasi chekutsvaga kusarudzwa kweNO2 (trimethoxysilane) (thiol-functionalized-SAM)) (Fig. 10b) 74,161.
A self-powered photoelectric gas sensor inobva pane chimiro chemhando III mudziyo.a Self-powered photovoltaic gas sensor inobva paSi/ZnO@CdS, self-powered sensing mechanism uye sensor response kune oxidized (O2) uye yakaderedzwa (1000 ppm ethanol) magasi pasi pezuva;74b Self-powered photovoltaic gas sensor yakavakirwa paSi ZnO/ZnO sensors uye masensor mhinduro kune akasiyana magasi mushure mekushanda kweZnO SAM ine terminal amines uye thiols 161
Nokudaro, kana tichikurukura nezvemaitiro anonzwisisika emhando III sensors, zvakakosha kuona shanduko yehurefu hweheterojunction barrier uye kukwanisa kwegesi kukanganisa mutakuri wekutengesa.Pamusoro pezvo, kuvheneka kunogona kuburitsa mafotogenerated carriers anopindirana nemagasi, ayo ari kuvimbisa kuona yega yega gasi.
Sezvakakurukurwa muongororo iyi yemabhuku, akawanda akasiyana MOS heteronanostructures akagadzirwa kuti avandudze masensa performance.Iyo Webhu yeScience dhatabhesi yakatsvagirwa mazwi akasiyana-siyana (metal oxide composites, core-sheath metal oxides, layered metal oxides, uye self-powered gas analyzers) pamwe nehunhu hwakasiyana (kuwanda, senitivity / kusarudzwa, simba rekugadzira simba, kugadzira) .Nzira Maitiro ezvitatu zvezvitatu izvi zvinoratidzwa muTebhenekeri 2. Mhedzisiro yekugadzirwa kwepamusoro yekushanda kwepamusoro gasi sensors inokurukurwa nekuongorora zvinhu zvitatu zvakakosha zvakarongwa neYamazoe.Nzira dzeMOS Heterostructure Sensors Kuti unzwisise zvinhu zvinopesvedzera magasi sensors, akasiyana MOS paramita (semuenzaniso, saizi yezviyo, tembiricha yekushandisa, kuremara uye oksijeni vacancy density, yakavhurika crystal ndege) yakanyatso dzidza.Chimiro chemudziyo, icho chakakoshawo kune iyo sensor's sensing maitiro, yakaregeredzwa uye isingawanzo kukurukurwa.Ongororo iyi inokurukura maitiro epasi ekuona matatu akajairwa marudzi echigadzirwa chimiro.
Iyo saizi yezviyo chimiro, nzira yekugadzira, uye nhamba yeheterojunctions yezvinhu zvekunzwa muType I sensor inogona kukanganisa zvakanyanya kunzwa kwe sensor.Uye zvakare, maitiro eiyo sensor anokanganisawo ne molar ratio yezvikamu.Type II zvigadziriso zvemidziyo (decorative heteronanostructures, bilayer kana multilayer films, HSSNs) ndiyo inonyanya kufarirwa zvigadziriso zvemidziyo inoumbwa nezvikamu zviviri kana kupfuura, uye chikamu chimwe chete chakabatana kune electrode.Kune iyi dhizaini chimiro, kuona nzvimbo yematanho ekuitisa uye shanduko dzadzo dzakakosha pakudzidza maitiro ekuona.Nekuti mhando II zvishandiso zvinosanganisira akawanda akasiyana hierarchical heteronanostructures, akawanda akasiyana ekuona masisitimu akatsanangurwa.Mune rudzi rwechitatu rwekunzwa kwemaitiro, nzira yekufambisa inotungamirirwa neheterojunction inoumbwa paheterojunction, uye nzira yekuona yakasiyana zvachose.Nokudaro, zvakakosha kuti uone kuchinja kwehupamhi hweheterojunction barrier mushure mekuratidzwa kwegasi rinotarirwa kune rudzi III sensor.Nekugadzirwa uku, self-powered photovoltaic gas sensors inogona kuitwa kuderedza kushandiswa kwesimba.Nekudaro, sezvo maitiro ekugadzira aripo akanyanya kuomarara uye kunzwisiswa kwakadzikira pane yechinyakare MOS-based chemo-resistive gasi sensors, kuchine kufambira mberi kwakawanda mukutsvagisa kwemasensa egasi egasi.
Iwo mabhenefiti makuru egasi MOS sensors ane hierarchical heteronanostructures ndiko kumhanya uye nepamusoro senitivity.Zvisinei, mamwe matambudziko anokosha eMOS gas sensors (somuenzaniso, kupisa kwepamusoro kwekushanda, kugadzikana kwenguva refu, kusasarudzwa kwakanaka uye kuberekazve, humidity effects, nezvimwewo) zvichiripo uye zvinoda kugadziriswa zvisati zvashandiswa mukushanda kwekushanda.Mazuva ano MOS gasi sensors anowanzo shanda pakudziya kwakanyanya uye anoshandisa simba rakawanda, izvo zvinokanganisa kugadzikana kwenguva refu kwe sensor.Pane nzira mbiri dzakajairika dzekugadzirisa dambudziko iri: (1) kuvandudza kwepasi simba sensor chips;(2) kugadzirwa kwezvinhu zvitsva zvinonzwisisika zvinogona kushanda pakadzika tembiricha kana kunyange pakamuri tembiricha.Imwe nzira yekusimudzira yakaderera-simba sensor machipisi ndeyekudzikisa saizi ye sensor nekugadzira microheating mahwendefa akavakirwa pamakeramiki uye silicon163.Ceramic based micro heat plates inoshandisa inenge 50-70 mV per sensor, nepo yakagadziridzwa silicon based micro heat plates inogona kushandisa zvishoma se2 mW per sensor kana ichishanda ichienderera pa300 ° C163,164.Iko kuvandudzwa kwezvinhu zvitsva zvekunzwa inzira inoshanda yekudzikisa simba rekushandisa nekudzikisa tembiricha yekushanda, uye inogona zvakare kuvandudza sensor kugadzikana.Sezvo ukuru hweMOS hunoramba huchideredzwa kuti huwedzere kunzwisiswa kwe sensor, kugadzikana kwekupisa kweMOS kunowedzera dambudziko, izvo zvinogona kutungamirira kukukurwa muchiratidzo che sensor165.Mukuwedzera, kupisa kwakanyanya kunokurudzira kupararira kwezvinhu pane heterointerface uye kuumbwa kwezvikamu zvakasanganiswa, izvo zvinokanganisa magetsi emagetsi e sensor.Vatsvagiri vanoshuma kuti yakanyanya tembiricha yekushandisa ye sensor inogona kuderedzwa nekusarudza yakakodzera yekunzwa zvinhu uye kugadzira MOS heteronanostructures.Kutsvaga nzira yepasi-tembiricha yekugadzira yakanyanya crystalline MOS heteronanostructures ndiyo imwe nzira inovimbisa yekuvandudza kugadzikana.
Kusarudzwa kweMOS sensors ndeimwe nyaya inoshanda sezvo magasi akasiyana anogara pamwe chete neakananga gasi, nepo MOS sensors dzinowanzonzwa kune anopfuura rimwe gasi uye dzinowanzo ratidza kuchinjika.Naizvozvo, kuwedzera kusarudzwa kwe sensor kune gasi rinotarirwa pamwe chete nemamwe magasi kwakakosha kune zvinoshanda.Mumakumi mashoma emakore adarika, sarudzo yakambogadziriswa nekuvaka majekiseni emagetsi emagetsi anonzi "electronic noses (E-nose)" pamwe chete necomputational analysis algorithms sekudzidzisa vector quantization (LVQ), principal component analysis (PCA), etc. e.Matambudziko ebonde.Partial Least Squares (PLS), nezvimwewo 31, 32, 33, 34. Zvinhu zviviri zvakakosha (nhamba ye sensors, iyo yakanyatsoenderana nerudzi rwekunzwa zvinhu, uye computational analysis) zvakakosha pakuvandudza kugona kwemhino dzemagetsi. kuziva magasi169.Zvisinei, kuwedzera huwandu hwema sensors kunowanzoda maitiro akawanda akaoma ekugadzira, saka zvakakosha kuwana nzira iri nyore yekuvandudza kushanda kwemhino dzemagetsi.Mukuwedzera, kugadzirisa MOS nezvimwe zvinhu zvinogonawo kuwedzera kusarudzwa kwe sensor.Semuenzaniso, kusarudzwa kusarudzwa kweH2 kunogona kuwanikwa nekuda kweiyo yakanaka catalytic chiitiko cheMOS yakagadziridzwa neNP Pd.Mumakore achangopfuura, vamwe vatsvakurudzi vakavhara MOS MOF pamusoro pekuvandudza sensor selectivity kuburikidza nehukuru hwekusabatanidzwa171,172.Kufemerwa nebasa iri, kushanda kwezvinhu kunogona kugadzirisa dambudziko rekusarudza.Zvisinei, pachine basa rakawanda rinofanira kuitwa pakusarudza zvinhu zvakarurama.
Kudzokororwa kwehunhu hwema sensors anogadzirwa pasi pemamiriro akafanana uye nzira ndechimwe chinhu chakakosha kugadzirwa kwakakura uye kunoshanda kwekushandisa.Kazhinji, centrifugation uye nzira dzekunyudza inzira dzakaderera dzekugadzira ma sensors egasi akakwira.Zvisinei, panguva yezvirongwa izvi, zvinhu zvinonzwisisika zvinowanzoita kuunganidza uye hukama pakati pezvinhu zvinonzwisisika uye substrate inova isina simba68, 138, 168. Somugumisiro, kunzwisisika uye kugadzikana kwe sensor kunowedzera zvakanyanya, uye kushanda kunowedzera kubereka.Dzimwe nzira dzekugadzira dzakaita senge sputtering, ALD, pulsed laser deposition (PLD), uye physical vapor deposition (PVD) inobvumira kugadzirwa kwebilayer kana multilayer MOS mafirimu zvakananga pane patterned silicon kana alumina substrates.Aya matekiniki anodzivirira kuvakwa kwezvinhu zvinonzwisa tsitsi, ive nechokwadi chekuberekazve sensor, uye kuratidza kugona kweyakakura-yakakura kugadzirwa kwe planar nhete-firimu sensors.Nekudaro, kunzwisiswa kwemafirimu aya akafuratira kunowanzo kuderera zvakanyanya pane kuya kwe3D nanostructured zvinhu nekuda kwenzvimbo yavo diki chaiyo uye yakaderera gasi permeability41,174.Mazano matsva ekukura MOS heteronanostructures panzvimbo dzakatarwa pane dzakarongwa microarrays uye kunyatso kudzora saizi, ukobvu, uye morphology yezvinhu zvinonzwisisika zvakakosha pakugadzirwa kwemutengo wakaderera wewafer-level sensors ine yakanyanya kuberekana uye kunzwa.Somuenzaniso, Liu et al.174 yakaronga zano rakasanganiswa repamusoro-pasi uye repasi-kumusoro rekugadzira makristasi epamusoro-soro nekukura mu situ Ni(OH)2 nanowalls panzvimbo dzakananga..Wafers for microburners.
Uye zvakare, zvakakoshawo kufunga nezve mhedzisiro yekunyorova pane sensor mune inoshanda maapplication.Mamorekuru emvura anogona kukwikwidza neokisijeni mamorekuru kune adsorption nzvimbo mune sensor zvinhu uye anokanganisa basa re sensor kune gasi rinotarirwa.Kufanana neokisijeni, mvura inoita semorekuru kuburikidza ne sorption yemuviri, uye inogonawo kuvapo muchimiro che hydroxyl radicals kana hydroxyl mapoka pane akasiyana oxidation zviteshi kuburikidza ne chemisorption.Mukuwedzera, nekuda kwehupamhi hwepamusoro uye hunyoro hwakasiyana hwezvakatipoteredza, mhinduro yakavimbika ye sensor kune gasi rinotarisirwa idambudziko guru.Nzira dzinoverengeka dzakagadzirwa kuti dzigadzirise dambudziko iri, senge gasi preconcentration177, muripo wekunyorova uye nzira dzekuyambuka-reactive lattice178, pamwe nekuomesa nzira179,180.Zvisinei, nzira idzi dzinodhura, dzakaoma, uye dzinoderedza kunzwa kwe sensor.Nzira dzinoverengeka dzisingadhure dzakarongwa kudzvanyirira mhedzisiro yekunyorova.Semuenzaniso, kushongedza SnO2 nePd nanoparticles kunogona kukurudzira kushandurwa kweokisijeni adsorbed kuita anionic particles, ichishanda SnO2 ine zvinhu zvine hukama hwepamusoro hwemamorekuru emvura, akadai seNiO neCuO, inzira mbiri dzekudzivirira hunyoro kutsamira pamamorekuru emvura..Sensors 181, 182, 183. Mukuwedzera, mugumisiro wekunyorova unogonawo kuderedzwa nekushandisa hydrophobic zvinhu kuti zvigadzire hydrophobic surfaces36,138,184,185.Nekudaro, kuvandudzwa kwemasensa anodzivirira hunyoro gasi kuchiri padanho rekutanga, uye mamwe mazano epamusoro anodiwa kugadzirisa nyaya idzi.
Mukupedzisa, kuvandudzwa kwekuita kwekuona (semuenzaniso, senitivity, selectivity, low optimum operating tembiricha) zvakawanikwa nekugadzira MOS heteronanostructures, uye nzira dzakasiyana-siyana dzakavandudzwa dzekuongorora dzakarongwa.Paunenge uchidzidza nzira yekunzwa yeimwe sensor, iyo geometric chimiro chechishandiso chinofanirawo kuverengerwa.Tsvagiridzo mumidziyo mitsva yekunzwa uye kutsvagisa mune epamberi nzira dzekugadzira inodiwa kuti uwedzere kuvandudza mashandiro egasi sensors uye kugadzirisa matambudziko asara mune ramangwana.Kune inodzorwa tuning yemaitiro e sensor, zvinodikanwa kurongeka kuvaka hukama pakati peiyo nzira yekugadzira yezvinhu zvinonzwa uye basa reheteronanostructures.Pamusoro pezvo, chidzidzo chekuita kwepamusoro uye shanduko muheterointerfaces uchishandisa nzira dzemazuva ano dzehunhu dzinogona kubatsira kujekesa maitiro ekuona kwavo uye kupa kurudziro yekuvandudzwa kwema sensors zvichienderana neheteronanostructured zvinhu.Chekupedzisira, kudzidza kwemaitiro emazuva ano ekugadzira ma sensor anogona kubvumira kugadzirwa kwemaminiature gasi sensors padanho rewafer rekushandisa kwavo maindasitiri.
Genzel, NN et al.Chidzidzo chenguva refu chemukati nitrogen dioxide mazinga uye zviratidzo zvekufema muvana vane asthma munzvimbo dzemaguta.nharaunda.Maonero ehutano.116, 1428–1432 (2008).
Nguva yekutumira: Nov-04-2022
